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DMN3007LSS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
1
± 100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
V GS(th)
R DS (ON)
g fs
V SD
1.3
?
?
?
?
5
7.9
16.4
0.67
2.1
7
10
?
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 15A
V GS = 4.5V, I D = 13A
V DS = 10V, I D = 15A
V GS = 0V, I S = 2.3A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
?
2714
436
380
0.7
?
?
?
?
pF
pF
pF
Ω
V DS = 15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
31.2
64.2
7.1
17.1
10.3
14.8
85.1
43.6
?
?
?
?
?
?
?
nC
ns
V DS = 15V, V GS = 4.5V, I D = 16A
V DS = 15V, V GS = 10V, I D = 16A
V DS = 15V, V GS = 10V, I D = 16A
V DS = 15V, V GS = 10V, I D = 16A
V DS = 15V, V GS = 10V,
I D = 1A, R G = 6.0 Ω
Notes:
5. Short duration pulse test used to minimize self-heating effect.
30
V GS = 10V
30
28
25
20
15
10
V GS = 4.5V
V GS = 4.0V
V GS = 3.0V
26
24
22
20
18
16
14
12
10
V GS = 2.8V
8
T A = 150°C
5
6
4
T A = 125°C
T A = 85°C
T A = 25°C
0
0
0.5
V GS = 2.5V
1 1.5 2 2.5 3 3.5 4 4.5
5
2
0
1
T A = -55°C
2 3
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN3007LSS
Document number: DS31460 Rev. 5 - 2
2 of 5
www.diodes.com
April 2010
? Diodes Incorporated
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